Design Of High Voltage Igbt Driver Circuit Optimized By Switching Process

Insulated gate bipolar transistor(IGBT)combines the advantages of flow control device thyristor and MOSFET.It has the characteristics of fast switching speed,large current capacity,strong pressure resistance,low on-state saturation voltage and simple driving circuit.In recent years in the field of power electronics has become very popular,and its corresponding series of IGBT drive circuit has also been widely developed and applied.In this thesis,combined with the switching characteristics of the IGBT,a highvoltage IGBT driving circuit is designed,which combines the dynamic characteristics of the IGBT and accelerates the opening speed of the IGBT by means of the segmented drive.At the same time,by adjusting the current value of the discharge branch to optimize the IGBT shutdown process.Circuit for the full-bridge negative high-voltage power supply topology,negative high voltage of 400 V,power supply level of 15 V,and integrated digital circuits and analog circuits.Circuit has a simple structure and good stability,etc.,can be used for HID xenon lamp ballast in.This thesis introduces the basic structure and characteristics of IGBT devices,including static characteristics and switching characteristics.The whole process of IGBT turn on and off is described and deduced in detail.And the current overshoot and voltage overshoot that may exist during IGBT turn-on and turn-off.Then,the topology and the isolation method of the gate drive circuit are compared,and the design ideas of driving voltage,gate resistance and switching speed are analyzed,which provide the theoretical basis for the design of the driving circuit.The design of the gate drive circuit mainly includes protection module,control module and gate drive module three parts.Wherein the protection module comprises an undervoltage protection circuit,an over-temperature protection circuit and an overcurrent protection circuit three sub-circuits to ensure that the circuit is working in a safe working state;the control module includes two sub-circuits that avoid simultaneous conduction circuit and control signal generation circuit,The signal generation circuit includes a Schmitt trigger which can be used to shape the input signal,while also generating two additional pulse signals for the IGBT segment opening;gate drive module is generated by the control signal generated by the previous level control IGBT The device is turned off and supplies power to the load.Finally,Cadence,Hspice and other design verification software on the sub-circuit and the overall system circuit simulation.The simulation of the whole system includes the simulation under the normal working condition of the system and the simulation under the abnormal working condition of overvoltage,over temperature and overcurrent.The simulation results are designed to meet the design goal.