Numerical Simulation And Analysis Of Temperature Field Generated By The Interaction Of Hollow Laser And Silicon

In this paper, a theoretical model of hollow laser irradiating silicon material was established. Adopt the simulation software of COMSOL to simulate based on the finite element method, which obtained the spatial and temporal distributions of temperature field and stress field generated by the interaction of hollow laser and silicon, which also got some characteristics and laws of it. The results of numerical calculations indicate that temperature irradiating on the surface of the silicon material is high outside and low in the center,although the central laser irradiation intensity is zero and the corresponding material location is not directly irradiated by the laser irradiation, the surrounding heat will converge toward the center, so that the center temperature rises slowly due to heat conduction. The paper also contrasted the temperature field produced by hollow laser and solid laser and analyzed the differences between them. The results of this paper can provide a theoretical basis for the study of the thermal effects between the laser and materials and supply a theoretical reference for laser damage and artifact processing of special requirements, which have a certain practical significance.