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Damage Effects Research Of Silicon Solar Cells And Silicon Ccd Induced By Laser

Posted on:2011-07-24Degree:MasterType:Thesis
Country:ChinaCandidate:D D QiuFull Text:PDF
GTID:2198330338490006Subject:Optical Engineering
Abstract/Summary:PDF Full Text Request
Monocrystalline silicon solar cells that were developed as the first kind of solar cell, were used in the field of space all long from the date of birth because of their high stability and high conversion efficiency ,and have played an important role in military and civilian areas. CCD (Charge Coupled Device) has a wide range of applications in civilian and military fields because of its high sensitivity and wide spectral response, etc.. To study the damage effects of these two kinds of photoelectric devices under the irradiation of laser, research the mechanisms of laser irradiating materials and optimize the anti-laser damage character of photoelectric devices, is of very important theoretical and practical significance. In this paper, the irradiation effects, specially the damage effects of solar cells under the irradiation of pulsed laser and CW laser and of CCD under the irradiation of pulsed laser were researched by experimental and theoretical methods, the damage mechanisms were analyzed. The main work of this paper is as follows:1. Damage effects of monocrystalline silicon solar cells induced by 532nm pulsed laser with three kinds of pulse width were researched, the damage mechanisms were analyzed. The results show that, pulsed laser induced damage to solar cells rely mainly on their thermal force effects, only the laser whose peak power density is more than 10~9W/cm~2 can cause damage to solar cells.2. Damage effects of monocrystalline silicon solar cells induced by CW laser at three kinds of wavelength were researched, the damage mechanisms were analyzed. The results show that, CW laser induced damage to solar cells rely mainly on their thermal effects. 10.6μm laser at average power density of 200W/cm~2 can cause damage to solar cells, the reduction ratio of maximum output power could up to 66.3% after longtime irradiation; the threshold of 1064nm laser is slightly higher than this value, the reduction ratio of maximum output power could up to 73.7% after longtime irradiation. 1319nm laser didn't damage the solar cell at average power density of 1.13×10~3W/cm~2.3. Take the typical damage phenomenon of CCD under the irradiation of a certain kind of pulsed laser as example, the mechanisms of pulsed laser induced damage to CCD were researched. The results show that high power pulse laser induced the ablation at different layers of CCD, increased the dark current and leakage current, which induced the failure of the device.
Keywords/Search Tags:Monocrystalline silicon solar cells, CCD, Pulsed laser irradiation, CW laser irradiation, Damage mechanisms
PDF Full Text Request
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