Fabrication And Research Of 808nm Al-free GaAsP Quantum Well High Power Semiconductor Lasers

Semiconductor lasers has wide wavelength range, small volume, light weight, long life, low cost, easy to mass production, so the varieties of fast development, wide scope of application, has covered the whole field of optoelectronics. Semiconductor laser has become a core technology in photoelectron science today. 808 nm laser diode as the pump sources are used to pump Nd: YAG laser, higher conversion efficiency than traditional lamp pumped, and the reliability of the pump sources are used to determine the reliability of the solid laser device. 808 nm laser diode laser in the military, precision machinery parts processing, printing industry and medical field has important application.Although the active area of Al helps to produce the desired wavelength, but contain Al epitaxial wafer easy oxidation and produce darker skin defect, the facet catastrophic optical damage density decreases, and facet catastrophic optical damage very likely to happen, thereby limiting the power of the laser and longevity. Al-free material has high cavity surface optical reckoning power density, thermal conductivity and electrical conductivity, and not easy to oxidation. In this paper, the preparation of 808 nm InAlGaAs quantum well semiconductor laser and Al-free GaAsP quantum well semiconductor laser, prove Al-free GaAsP high-power semiconductor quantum well laser than InAlGaAs quantum-well high-power semiconductor laser devices with high performance. The main research work is shown as follows:(1) Introduce the 808 nm semiconductor quantum well laser application and research status, this paper discusses the advantages and disadvantages of the containing Al quantum well and Al-free quantum well. Made a detailed introduction to 808 nm semiconductor laser,the basic working principle and main parameters to evaluate the properties of high power semiconductor laser work and its significance in evaluation.(2) Introduces the preparation of high power semiconductor lasers in each process, and involves the specific parameter values, based on the implementation of the traditional process and research, to process improvement is put forward, including photolithography, corrosion, sputtering, etc. Get the device performance parameters.(3) Theoretical calculation and analysis of the semiconductor laser parameters effect on the properties of quantum well structure, affecting the laser characteristics of structural parameters for the comprehensive optimization, the design of 808 nm semiconductor laser quantum well structure. Based on this design InAlGaAs quantum well semiconductor laser and Al-free GaAsP quantum well structure of semiconductor laser and MOCVD epitaxial growth, preparation process and the measured results, and according to the test results for optimizing the structure and the epitaxial growth conditions, eventually get the optimized structure of semiconductor lasers.(4) According to the optimized 808 nm semiconductor laser structure preparation epitaxial wafer, encapsulated into article 100?m wide, lead hole width is 95?m, the cavity length is 1000?m not coated single pipe and to measure the photoelectric properties. Prove to Al-free GaAsP high-power semiconductor quantum well laser with high quantum well optical catastrophe power density, power output and efficiency. Al-free GaAsP high-power semiconductor quantum well laser get slope efficiency up to 1.16 W/A, 0.3 A threshold current, COD power of 4.9 W.