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Study On Characteristics Of 808nm High-Power Al-free Semiconductor Laser Diode Array

Posted on:2008-10-09Degree:MasterType:Thesis
Country:ChinaCandidate:Z QuFull Text:PDF
GTID:2178360242472260Subject:Optical Engineering
Abstract/Summary:PDF Full Text Request
Semiconductor laser has an important role in the development of national economy and military fields because of it's small bulk, little weight, high efficiency and long life time. Both the accelerated development of solid-state laser, high power semiconductor laser and the increasing fiber coupling efficiency have contributed a lot to the development of high power semiconductor laser array with high duty cycle. DPSSL (diode pumping solid state laser) has been applied to some civil fields like medical treatment and industrial processing as well as military fields namely laser guidance, laser ranging and imaging radar etc. High power laser diode array is mainly used as the pumping energy source for solid state laser. High duty-cycle laser diode array is required for meeting the demand of the DPSSL technology. In this paper, the different structure designs and packages taking account for heat dissipation of Al-free high power laser diode arrays were studied, and some achievements are listed as below:1 On the basis of the whole of Al-free high power laser diode array, not only the key technical process was discussed but also the factors were analyzed which may influence the characters of Al-free high power laser diode array in every significant technical process.2 The source of heat and diode's characteristics in high power laser diode was obtained depending on temperature basing on some analysis on the mechanism of heat in high power laser diode.3 After testing the parameter of laser linear array module with test macro and analyzing the external temperature influence of the laser, it could be concluded that as the temperature increases, the output power would experience a parabolic-curve decreases while the slope efficiency would show an exponential decline.4 In order to increase the output power and to satisfy the high duty cycle even continuous wave operating, the linear arrays and stack arrays of Al-free high power laser diode with active small channel heat sink cooling were designed. The main parameters of high power laser diode array which include the duty-cycle, peak-power, E-0 efficiency, wavelength and angle of divergence can meet the expected indexes.5 The oxygenation of cavity surface in high power diode laser was avoided with the technology of surface passivation. Furthermore, avoidance of the higher recombination current around the cavity surface weakened the optical catastrophe of LD.6 The paper analyzed the optical-field distribution of LDA with two relative theorem and described the light beam quality of LDA with square of diffraction-limit factor (M~2).
Keywords/Search Tags:Al-free Semiconductor Laser, Laser Diode Array, High Duty-Cycle, High Power, Optical Catastrophe, Optical-Field Distribution, Characteristic Analysis
PDF Full Text Request
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