Process Property Of ZnO Film By Reactive Magnetron Sputtering In High Power Semiconductor Laser

ZnO takes much attention as a wide band gap compound semiconductor material which has stable chemical, electrical properties and optical properties. It is used in very wide range because the characteristic band gap3.37eV at room temperature, with no toxic side effects, and low cost. This paper designed to use ZnO as the front cavity surface AR coating of high-power semiconductor lasers.In this paper,the ZnO films were prepared by magnetron sputtering. The target is a pure Zn target, and sputtering working gas is a mintune of high purity O2and Ar. Then used Silicon and quartz were used as substrates to prepare the ZnO thin film, and study the characteristics of thin film in different sputtering process. Coating on the front cavity surface of808nm laser with the optimized parameters, then testing their power and threshold current and other parameters, we get the result that its reflectivity reduce, and its output power, threshold current, slope efficiency and electro-optical conversion efficiency has significantly improved after the coating. The experiment is designed to meet the result.