The Design And Research Of 50W Side Pump Nd: YAG Laser By 808nm Semiconductor Array LD

The theory of side pumping Nd:YAG laser by high-power array-semiconductor laser cluster are discussed, on the basis of this theory, we design, make and justify the laser, and measure its data. At first, modeling of these divvies by rate equations to obtain expressions for threshold and slope efficiency is given. On the case of this theory, the large numbers of literatures and datum are consulted, and the laser is home studied. Through rationally selecting and improving the reflector surface, ensuring the beam quality, increasing farthest the absorption path, and improving effective pumping frequency; through designing the water cooler of YAG bar, the volume of laser is half the same internal and international production, and the output power is get to the extremum of the same international production. At last, the device is given. It adopt 3 rank and 3 line, add up to 9 continuous output LD of 20W and 808nm, Nd:YAG laser bar is 3mm,output wavelength is 1064nm,output power is 50W,output light mode is continuous multimode, the opto-optic conversion efficiency is 29%.