| Because of its stealth, speed controllability, low cost, Pi N diode solid-state plasma reconfigurable antenna is an effective technical approach to achieve antenna miniaturization as well as enhance radar and microwave communication system performance, which shows a strong research value. Compared to homojunction diode, heterojunction Si/Ge/Si S-Pi N diode can effectively improve the performance of the antenna as a solid material with a plasma antenna. Antenna performance is primarily decided by the intrinsic region diode carrier concentration and distribution, which should be focused on in the research of solid-state plasma antennas heterojunction Si/Ge/Si S-Pi N diode.Based on the working mechanism of Pi N diodes, this paper outlines the mechanism of solid-state plasma that is the basic unit of solid-state plasma antenna. Analyses the microwave transportation character of solid-state plasma. A method to enhance the concentration of solid-state plasma by using the heterojunction Si/Ge/Si S-Pi N diode as the basic unit of solid-state plasma antenna is proposed. The energy band structure of Ge/Si heterojunction is analyzed, and the influence of geometric structure parameters on the carrier concentration and distribution of Pi N in the Si/Ge/Si region, the length, thickness, length of the electrode and the length of the N and P region and the depth of the area and the depth of the region are studied and simulated. The simulation results show that the carrier concentration is inversely proportional to the length of the intrinsic region, the length of the electrode and the length of the P and N region. Which increase first and then decrease with the increase of the thickness of the region. The theoretical relationship between the concentration and distribution of physical parameters and solid-state plasma is studied. The concentration and distribution of Pi N diode solid plasma are revealed by simulation. The influence of physical parameters such as Si/Ge/Si, P and N on the carrier concentration and distribution of Pi N in the region is studied. The simulation results show that the carrier concentration is proportional to the bias voltage and the concentration of P and N increases first and then decreases, while the influence of concentration of the intrinsic region is very small.Based on the above research, the structure of the heterojunction Si/Ge/Si S-Pi N diode is presented, and the simulation results show that the carrier concentration of the intrinsic region is above 1e18cm-3, and the basic requirements of the solid state plasma antenna for Pi N diode are met. Compared with the same parameters of the Si Pi N diode, the carrier concentration in the intrinsic region is inproved about 250%. Therefore, it can choose a longer length of I region and a smaller bias voltage, which can help to simplify the structure of the solid state plasma antenna and enhance its performance. |
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