Investigation Of Solid State Plasma Characteristics And Reconfigurable Antenna Based On Silicon SPiN Diode

With the continuous development of information technology and its wide application in military and civilian fields,the higher requirements for information acquisition have been set.As the main part of the electromagnetic wave transmitting and receiving in wireless communication system,the performance of the antenna plays an important role in the whole communication system.However,conventional antennas are usually made of metal,which has a large radar cross section?RCS?,so the ability of reflecting electromagnetic wave is very strong,which makes it difficult for the stealth technology of ships and aircraft.Therefore,a new antenna of silicon based solid state plasma with good invisibility and fast dynamic reconfiguration has emerged,which will have great development space and application prospect in the future communication field.This paper focuses studied the concentration distribution characteristics of the lateral SPiN diode under high-level injection,microwave transmission characteristics of solid state plasma,realization method of silicon based solid state plasma antenna were studied.The main research work and achievements are as follows:1.The solid state plasma concentration distribution characteristics of the SPiN device which is a basic radiating element was investigated.Based on the electron and hole continuity equations,one dimension concentration distribution model of solid state plasma has been built by analyzing the working characteristics of SPiN under the condition of large injection.Moreover,the relationship among the length of the intrinsic region,the doping concentration of P⁺and N⁺region,the applied voltage and the concentration of solid plasma was discussed according to the model.The model calculation was in good agreement with the simulation results,which proved the accuracy of the model.2.The electrical conductivity of the solid state plasma was investigated.The complex electrical conductivity model of the plasma has been built based on the analysis of the two dimensional concentration distribution characteristics of solid state plasma of the SPiN diode.The study found that electrical conductivity of solid state plasma would be converted from real value to complex value,when the electromagnetic wave interacted with the solid state plasma.Moreover,the distributions of the real and imaginary parts of the conductivity are similar to that of the solid state plasma concentration in the intrinsic region.Furthermore,the variation trend of the real and imaginary parts of the conductivity and the relaxation time,the solid state plasma concentration and the electromagnetic wave frequency between the three has been explored.The study of the characteristics of electrical conductivity can provide theoretical guidance for the design of the antenna.3.The complex permittivity and the skin depth of electromagnetic wave in solid state plasma were investigated.Based on the analysis of the motion law of the harmonic oscillator in the electromagnetic wave,the complex permittivity model of the solid state plasma and the skin depth model have been built.The study found that the real part of the permittivity was mainly related to the solid state plasma concentration,and did not change with the changing of the electromagnetic wave frequency.However,the imaginary decreased with the increasing of the resonance frequency.The skin depth of electromagnetic wave in solid state plasma decreased with the increasing of the resonance frequency,and the higher solid state plasma concentration mean that the smaller skin depth.4.The study on the collision frequency characteristic of the solid state plasma.Based on the two dimensional solid state plasma concentration distribution model and analysis of scattering mechanism of solid state plasma mobility,the collision frequency model of the solid state plasma of homogeneous and Si_1-?'Ge_?'/Si heterostructure SPiN diodes have been built.It was found that the collision frequency showed the opposite distribution trend with the solid plasma concentration,that is,the higher the plasma concentration,the lower the collision frequency.Due to the concentration of plasma in the heterostructure SPiN diode was higher than that of the homogeneous diode,the collision frequency is lower.Simultaneously,the collision frequency would present uniform distribution in the intrinsic region by adjusting the percentage of Ge in Si_1-?'Ge_?'alloy.The theoretical model of collision frequency can provide a theoretical guidance for the design and implementation of the subsequent antenna.5.The solid state plasma dipole reconfigurable antenna was investigated.By the simulation analysis of the parameters which affect the radiation characteristics of the dipole antenna,the optimal parameters of the dipole antenna have been obtained.The optimization parameters were consistent with the parameters obtained from the physical models in the previous chapter,which verifies the accuracy of the theoretical models.And the dipole antenna sample with three frequency points reconfigurable could be realized by the silicon technology.The test results of the samples were in good agreement with the simulation results.6.The solid state plasma annular holographic reconfigurable antenna was investigated.through the analysis of working mechanism of holographic antenna,the silicon based SPiN holographic antenna were modeled using the antenna simulation software,and the influence of structure parameters on the antenna radiation characteristics of the antenna were simulated and optimized.The study found that the plasma frequency reconfigurable holographic antenna based on optimization parameters can be reconstructed at three frequency points of 63.8GHz,58.8GHz and 54.3GHz,and the optimal radiation efficiency can reach 83%,which verified the feasibility of the solid state plasma antenna.