Research On Solid State Plasma Reconfigurable Antenna Based On SPiN Diode

With the rapid development of science and technology,the modern communication system has been developing toward the direction of low power,wideband and high integration,consumer electronics,smart home and vehicular electronics have attracted more and more interests,these require the modern antenna system shows flexible reconfigurable performance,wide bandwidth and miniaturization.Besides,radar cross section is an important indicator for the modern antenna system.Therefore,it is very important to reduce the RCS in the antenna system analysis.In the traditional metal antenna system,metal as the basic radiation element,this antenna has a large weight,low flexibility and poor stealth performance,which restrict its development scale and speed.Solid state plasma reconfigurable antenna has characteristics of dynamic reconfigurability,wide band characteristics,small dimension and compatible with microelectronics technology,which is an effective method to improve the performance of radar and communication system.The SPiN diode is the basic radiation element of the solid state plasma reconfigurable antenna,and it plays an important role in the silicon-based antenna system.This paper focuses studied the distribution characteristics of the solid state plasma within the SPiN diode and its microwave transmission characteristics,designed and optimized the semiconductor technology of the SPiN diode and silicon-based reconfigurable antenna,three kinds of high-integration reconfigurable antennas are obtained.The main research work and achievements of this paper are shown as follows:1.Research of the SPiN diode working mechanism and plasma characteristics.The structural model and working mechanism of this diode,carrier transport mechanism within the top silicon layer,solid state plasma theory and microwave characteristics were investigated,and it also studied the carrier concentration and distribution model within the‘i'region.A solid state plasma device with high carrier concentration was obtained by optimizing design which provided a theoretical basis for the research of the silicon-based solid state plasma antenna.2.Research of the SPiN diode preparation and forward characteristics.Based on the theoretical analysis and structural optimization of this diode,a novel preparation process of the SPiN diode was designed,which included SOI technology,trench isolation,ion implantation,etc.Several SPiN diode elements and arrays with different‘i'region sizes were obtained.By comparing the results of the experiment,a solid state plasma SPiN diode with optimal‘i'region size parameters was obtained,carrier concentration within this diode exceeding 10¹⁸cm^-3,which verified the feasibility of this preparation process.3.Research of the solid state plasma reconfigurable monopole antenna.Based on the electromagnetic theoretical model,a silicon-based frequency reconfigurable monopole antenna was designed and fabricated.The resonant frequencies at 3.73 GHz and 3.85 GHz have been achieved by turning on or off different sections of the monopole antenna,other radiation parameters results of this antenna agree well with the simulated results,which provide the theoretical and practical basis for the study of solid state plasma reconfigurable antennas.Besides,a reconfigurable monopole antenna based on SPiN diodes with good radiation parameters was investigated,two resonant frequencies at 3.15 GHz and 3.45 GHz were obtained which validate the rightness and reconfigurability of the solid state plasma antenna.4.Research of the reconfigurable monopole antenna based on band stop filter.To further improve the integration of the silicon-based reconfigurable antenna system,a silicon-based microstrip band stop filter was designed and fabricated based on the theoretical analysis and parameter optimization,and this filter provides good frequency selectivity to meet the requirements of the designed antenna.To verify the feasibility and effectiveness of the solid state plasma antenna,a silicon-based reconfigurable monopole antenna based on this filter was designed and fabricated,two resonant frequencies at 3.23 GHz and 4.48 GHz were obtained,and other radiation parameters also show good performance.Besides,a solid state plasma reconfigurable monopole antenna based on the optimized filters was designed,and the reconfigurability of this antenna was achieved dynamically,which set a foundation for further study of the silicon-based reconfigurable antenna's integration.5.Research of the reconfigurable dipole antenna based on SPiN diodes.To verify the variety of the solid state plasma reconfigurable antennas,a silicon-based reconfigurable dipole was investigated in this paper.The simulated and measured results show that this antenna realized two reconfigurations at 1.33 GHz and 1.65 GHz,respectively.The radiation patterns and other radiation parameters of this antenna also show good performance.Besides,a solid state plasma reconfigurable dipole antenna based on SPiN diodes was designed,SPiN diodes were the basic building blocks of the plasma channel,and the resonant frequencies at 1.23 GHz and 1.52 GHz have been achieved.The pattern characteristics and radiation efficiency also satisfy the requirement of designing.