Research Of Lateral SPiN Solid State Plasma Dipole Antenna

Silicon-based reconfigurable antenna, based on lateral SPi N, with unique advantages of pattern and frequency reconfiguration is superior to the traditional one and is an effective technology to achieve antenna miniaturization and enhance radar and wireless communication system performance.Firstly, the working mode of the lateral SPi N diode and generation mechanism, microwave characteristics of solid state plasma are analyzed in this paper.A solid state plasma antenna model is established based on the SPi N diodes. Under 14 GHz working frequency,solid state plasma antenna is simulated by application of HFSS.Research on the influence of structure parameters such as section size, conductivity, plasma substrate conductivity,substrate thickness, interconnection etc. and physical parameters for example substrate doping concentration on the performance of the solid state plasma antenna is done.Simulation results show that : gain of the antenna increases and S11 parameter decreases with the increase of the cross section of the plasma region when the cross-sectional shape is square; the same rectangle cross-sectional area size compared with square shape can make the antenna performance reached the same level; when the conductivity of the solid-state plasma region is increased, the performance of the antenna increase but when the improved performance of the antenna is increased to a certain point,it drops due to impedance mismatch;part of performance for example gain decreases with the conductivity increase of the substrate; the resonant frequency of the antenna decreases with the thickness of the substrate increases;under conditions of radiation oscillator arm with the same length, when a small number of short wires exist, the impact on is larger on antenna resonance point, with the further increase the number of short wires, up to a certain amount, its impact on the antenna resonance point very little can be ignored.Based on the above simulation results, a SPi N diode is designed to meet the antenna performance, with i region width 50?m, thickness of 80?m, the silicon substrate thickness500?m, the doped region doping concentration of 1020cm-3, between devices metal interconnect line length of 100?m, and by using the SPi N diode a frequency reconfigurable dipole antenna is designed.When arm length of the antenna is 2.3mm, 3.6mm and 4.7mm,the antenna can achieve frequency reconfiguration with aerial frequency of 19.9GHz,14GHz, 11.7GHz in simulation. The process of the plasma antenna is studied.The mask layout is drawn and antenna samples have now been prepared, being tested.