Design Of CMOS Low Noise Amplifier Used For BeiDou Navigation Satellite System

In recent years, wireless communication technology is constantly evolving to meet the different needs of industries, and Bei Dou Navigation Satellite System is the one of them.At the same time, rapidly progress on and CMOS technology in a SOC(System-On-Chip)to be possible. At the same time, to meet the market demand, a single radio mobile RF device that can handle the multi-standards and mufti-band signals is realized. Wide band low noise amplifier is the key constituent in the front-end of RF receiver. As the first stage of the system, its gain, noise figure and linearity directly take effect on the whole circuit.So the research of wide band CMOS LNA is imperative under this situation.In this thesis, a wide-band CMOS low noise amplifier is deeply studied. A wide-band low noise amplifier with a bandwidth of 1-2GHz, a gain of 14 d B and a noise figure of less than3 d B is designed. Firstly, the operating mechanism of the low noise amplifier and the fundamental theory of the noise in the circuit are discussed and analyzed in this article.And then combined with the design objectives, a new low noise amplifier topologies,named the source follower negative feedback structure, is given after analyzing and comparing the several classic low noise amplifier topology structure, discussing their working principle, advantages and disadvantages. This structure takes the resistance negative feedback structure as the main body, combining the current multiplexing technology and the noise canceling technology, which can achieve high gain, low power consumption and low noise. The whole circuit avoid to the use inductance, diminishing the chip area. The matching, the simulation and the optimized design to low noise amplifier was completed with the simulator Spectre RF in Cadence. Due to this, a good simulation result has been obtained. What's more, analysis and discussion has been made to the simulation result. And we completed the layout of the wide-band low noise amplifier, using the layout tool of Cadence-Virtuoso Layout Editor.The wide band LNA is designed in TMIC 0.18?m RF CMOS process, and the simulation results show that, it works 1-2GHz, and the noise figure is less than 3d B. The gain is better than 15 d B with the impedance matching S11 and S22 of-10 d B, and the IIP3 is-15 d Bm,various performance indicators have reached the requirements of the design target.