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Research And Design Of Low Power CMOS Transceiver RF Front-end Circuits For WBAN

Posted on:2016-11-17Degree:MasterType:Thesis
Country:ChinaCandidate:C LiFull Text:PDF
GTID:2348330479453174Subject:Microelectronics and Solid State Electronics
Abstract/Summary:
With the rapid development of material life, people’s demand for wireless communication and other electronic equipment is also increasing, and the Internet of things has become the development trend of the times. As one of the core networking technology, wireless body area network(WBAN) can be effectively applied to real-time monitoring of the disease, home automation, remote medical diagnostics and so on, which has wide application and huge potential market. The key issue in WBAN technology is to achieve a interconnection between close terminals, and Bluetooth technology is most widely used in WBAN because of its complete agreement, low power, low cost and high integration.The earliest design of integrated circuits for Bluetooth took the method of multi-chip integration, so it had high power consumption. In recent years, most of the radio frequency integrated circuits are implemented on GaAs or SiGe process, which has a relatively high unit-gain cutoff frequency(f T). However, with the continuous shrinking of CMOS technology node, the improving of fT, good RF performance and high integration of RF, IF and Baseband, CMOS process has become the mainstream application in low power wireless communication. But achieving a 2.45 GHz Bluetooth transceiver with CMOS technology is still an urgent practical need due to the stringent requirements of performance, power and area in RF front-end circuits.Based on this, we design a 2.45 GHz Bluetooth low power CMOS transceiver. The dissertation identified the architecture of transceiver, studied the key issues of RF design in CMOS process, and finally finished the schematic designs, layout designs and test circuits designs of LNA, Mixer, PA and channel filter. Furthermore, in order to achieve low power, the design has some innovation and optimization in the architecture of transceiver.The design is based on TSMC 0.18μm RF CMOS process, and the simulation results show that the maximum output power is 0dBm, the transmit power consumption is 13 mA, the receive sensitivity is-85 dBm, the receive power consumption is 18 m A, and the entire transceiver can meet the WBAN with low power, low cost and high linearity.
Keywords/Search Tags:RF transceiver, Bluetooth, wireless body area network, CMOS, low power, power amplifier, low noise amplifier, Mixer, image reject
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