1200V SiC MOSFET Simulation Design And Optimazation

With the rapid development of the smart grid, new energy and high frequency energy motor, power electronics technology in large capacity power conversion applications are facing unprecedented opportunities and challenges. SiC(silicon carbide)materials have the advantages of specifically large band gap, high breakdown electric field, the electron mobility speed and high thermal conductivity. These physical properties make the silicon carbide material has broad prospects for development in high temperature, high frequency, high voltage, anti-radiation field. Among them, the high thermal conductivity is beneficial for the heat dissipation and power devices highly integrated. And the high saturation velocity can make power devices used in radar and quick devices. Besides, the high critical displacement enables superior radiation resistance for SiC devices than in Si devices. These make silicon carbide good performance in terms of high-frequency, high-temperature, high-power, anti-radiation. Thus has laid a solid foundation for the development of the aerospace, military, oil exploration, nuclear energy, telecommunications and other fields.1200V SiC MOSFET shows a good performance because of its low specific resistance, high switching speed and high temperature characteristics. It has become a hot research field. It is widely considered the most likely to replace 1200V Insulated Gate Bipolar Transistor(IGBT) device. Based on semiconductor physics and power devices, with the help of SILVACO's Atlas, we have carried out the physical modeling and electrical characteristics of the device. We successfully design 1200V SiC MOSFET. Then we optimized the base thickness and doping concentration, JFET region width and doping concentration, p-base region thickness and doping concentration of the channel length. The 1200V SiC MOSFET we designed has lower on-resistance and higher breakdown voltage, and demonstrated excellent performance. Finally, this paper put out Current Spreading Layer(CSL) and the new Super-Junction (SJ)structure of SiC MOSFET, which can further improve 1200V SiC MOSFET performance.