The Drivering And Protecting Circuit Design Of 1200V IGBT And SiC MOSFET

With the rapid development of power electronic technology and continuous improvement of application requirements,the power device has also been developed at a high speed.IGBT,the third generation power electronic device,plays an important role in many fields,such as new energy power generation,rail transit,smart power grids,electric vehicles,international industry and so on.In recent years,the research about SiC device has become a hot topic in this field in the wake of commercial SiC devices being continuously launched.IGBT and SiC MOSFET are two kinds of power electronic devices used most widely.Therefore,studies about gate drive and conservation technology are greatly significant for the application of them.This paper introduces the basic structures,fundamental principles and switching process of IGBT and SiC MOSFET.Firstly,through comparing the parameters performance of IGBT module(FF300K12K74)with SiC MOSFET module(CA300M12BM2)in detail,the differences of drive protection circuit design can be found between IGBT and SiC MOSFET.Next,two separate drive protection circuits are designed for IGBT and SiC MOSFET according to the differences between them.On the basis of the above research,double pulse test platform is built up,and the drive performances and protection circuits of two drive protection circuits have been tested to verify the reliability and advancement of drive protection circuits in this paper.In the end,based on the double pulse test platform,through comparative experiments,the effects of RG?CG?LG?LE/LS on the switching process of IGBTs and SiC MOSFETs are described clearly.It turns out SiC MOSFET is affected more strongly by RG and CG,so that strong wave shocks may be aroused.Moreover,different influences are caused by LG towards turn-on transient between IGBT and SiC MOSFET,and so LS does towards turn-off transient between two of them.It has been proved that device protection circuits should be designed separately for IGBT and SiC MOSFET instead of being transplanted directly.At the same time,foundations are provided for setting up loop parameters for two kinds of drive protection circuits.