1200V/840A Silicon Carbide Module Packaging Technology And Driver Design

As a wide band gap semiconductor material,silicon carbide has superior performance than traditional silicon-based devices.As a new type of wide band gap semiconductor device,SiC MOSFET has the characteristics of low on-resistance and small switching loss,which can reduce device loss,improve system efficiency,and is more suitable for high-frequency circuits.These excellent characteristics of SiC MOSFETs need to be perfectly demonstrated through module packaging and driving circuit systems.To this end,this article studies and explores the packaging technology and drive design of SiC MOSFE.The main work completed in this article can be summarized as follows:First,the basic structure and working principle of SiC MOSFETs are introduced.At the same time,the key parameters affecting the static and dynamic performance of SiC MOSFETs are analyzed,and the material characteristics used in SiC MOSFET module packaging are introduced.Secondly,taking the 1200V840 A SiC MOSFET module as an example,the key technologies of silicon carbide MOSFET module packaging are introduced.Completed the DBC design suitable for silicon carbide chips and the SiC MOSFET module chip layout and extraction of module stray inductance.And the thermal analysis of the module chip and the bonding wire thermal analysis.The designed and packaged module is manufactured and the dynamic and static test of the SiC MOSFET module is completed.Then,the switching process of the SiC MOSFET module is introduced,the design and driving requirements of the new SiC MOSFET module driving circuit are analyzed,the bridge arm crosstalk problem of the SiC MOSFE module is analyzed,and a driving scheme capable of suppressing the bridge arm circuit crosstalk problem is proposed.The hardware design of the driving circuit is completed according to the driving scheme.Finally,the module packaging and driving design of the SiC MOSFET are completed,and the results tested in the driving experiment are verified,which proves the feasibility of the module packaging scheme and driving design of the SiC MOSFET.