Improving The Reliability Of Research And Practice Of Silicon Strain Sensor

In present world,the information technology level has become an important symbol of a country’s informatization ability and international competitiveness.As the key of information industry,sensor is the significant IT basis of new technological revolution and information society. Pressure sensor is one of the most widely used sensors.Silicon strain sensor, for its obvious advantage,has been more and more used in pressure measurement. The reliability of sensor is one of the most critical indexes to measure its application superiority.This paper is titled with ‘Improving the Reliability of Research and Practice of Silicon Strain Sensor’,studying the methods to enhance the reliability of silicon strain sensor.These studies has great realistic engineering significance to improve the quality of sensor and promote the development of sensor industry.This paper research the following aspects of silicon strain sensor,including the working principles,influencing factors on reliability, SISTPB reliability optimization design,analysis of manufacturing technology and methods to reduce stress.Experiments are carried out to verify the effects of the methods to improve the reliability and stability of silicon strain sensor. The main work includes:(1) The internal and external factors that influence the reliability of silicon strain sensor has been studing on: Structure design,especially the design of SISTPB, is the main internal factor. The external factor is the manufacturing technology of the silicon strain sensor, which may introduce unstable factors in its manufacturing process.(2)Analysis of different conditions that influence the sensitivity(including the design of SISTPB, the patch position of silicon strain gauge,the thickness of SISTPB elastic diaphragm,etc) and overload capacity(including the thickness of SISTPB elastic diaphragm, the SISTPB R angle, the diameter of the inside pore and the stress groove’s size of SISTPB, etc)of silicon strain sensor through finite element method.Studies on the SISTPB design of silicon strain sensor with different pressure ranges and structures.Determing the design code of SISTPB which is the most important part of silicon strain sensor.Guiding different pressure ranges and the best design of SISTPB effectively.(3) The concentrative measures to effectively reduce or remove different residual stresses have be putting forward.Those targets and effects may differ according to different measures. Qualitative analysis of positive impacts on the reliability and stability of silicon strain sensor by different measures has been putting.Experiments are carried out at last to verify the above two aspects influencing the reliability and stability of silicon strain sensor. It turns out that the SISTPB optimization design of silicon strain sensor plays a significant role in improving the precision and overload capacity. It also shows that the measures to remove residual stress have an obvious effect on improving the time drift and temperature hysteresis of silicon strain sensor. Therefore, the reliability and stability of silicon strain sensor are effectively improved.