Study Of Strain Modulation In Strained Silicon-on-insulator Nanomembrane

It is well known that enhancing the transistor performance by traditional scaling device dimension is increasingly difficult in terms of cost and technology, limiting the further development of Moore’s law. Strained silicon-on-insulator(s SOI) combines the benefits of strained silicon technology and silicon-on-insulator(SOI), with the features of high mobility, full compatible with bulk silicon integration process, and has the advantages of eliminating the parasitic latch up effect, high integration density, fast speed, weak short channel effect etc., which is incomparable for bulk silicon. s SOI has been undoubted one of the most promising technology.Combining with the Chinese Academy of Sciences Shanghai Institute of Microsystem and Information Technology undertaking the National Major R&D porjects “novel silicon-based strained materials research”, the paper in the thesis is based on the ultra-thin s SOI nanomembrane substrate material, and carries out the research of strain modulation of the suspended bridge structure, by introducing the hydrofluoric acid vapor corrosion, designing the particular bridge structure, basing on the elastic deformation theory and has achieved suspended strained silicon nanometer of the uniaxial strain value 4.65%, further verified by the finite element software Comsol Multiphysics via simulating the strain distribution of the suspended bridge structure. The main work and results are summarized in the following:1. In chapter 1, study on the strained silicon technology and SOI technology, discuss the strain distribution and type change of the top strained silicon of s SOI.2. In chapter 2, depict the theoretical analysis between strained silicon and the enhancement of carrier mobility, and compare the relation of the two strained types----uniaxial and biaxial strain with mobility3. In chapter3, describe the principle of Raman scatter, derivate the function of Raman peak shift and strain value, design the particular suspended bridge structure of the top bulk silicon(no strained) of SOI, measure the virtual strain value introduced by the heat effect under the condition of different size and different laser power, offering the calibration for the following strain measurement experiment.4. In chapter 4, introduce the process of fabricating s SOI, by introducing the hydrofluoric acid vapor corrosion, designing the particular bridge structure and basing on the elastic deformation theory, has achieved suspended strained silicon nanometer of the uniaxial strain value 4.65%.5. In chapter 5, use the finite element software Comsol Multiphysics to simulate the strain distribution and strain type of suspended bridge strained structure. According to the properties of ultra-thin s SOI nanomembrane material, set up the elastic matrix parameters of the software, achieving the strain distribution of the structure under different sizes.