Study On The Structure And Epitaxy Technology Of APD Photodetectors Based On Inp Substrate

Since 20 th Century, along with the increasingly development of optical communication continuously to the direction of high speed and large capacity transmission, continuous innovation of space exploration, the research of high response speed, large bandwidth and high gain of the receiving device develop. In order to realize themanufacturing of this kind of device, the avalanche multiplication effect of avalanche photodiode(APD) emerge as the times require, and become an important part of thework, the main principle is that when the electric field depletion area will accelerate to the carrier energy higher than the band gap, the secondary carrier can be produced by the the collision bewteen photon-generated carrier and lattice.The general layout of the APD device is the basic structure of the PIN which is added with an avalanche gain layer, it not only has the high sensitivity and fast response speed characteristics of PIN devices, also has internal high gain, the APD device have the adventage of the traditional PIN device on receiving weak optical signal. In the long wavelength communication field, InP based InGaAs detector has a high degree of response in the long wavelength communication windows, this article is for the InP based APD, mainly for absorption, gradient, charge, multiplication separated structure APD device(SAGCM-APD) study, analysis of influence of structural parameters of the device, on the basis of PIN manufacturing process parameters, and further optimizing the structure, the preparation of the device, mainly engaged in the work as follows:1) The working principle of the APD device foundation, expounds several kinds of common APD device structure, and then analyze the impact of several important parameters of photoelectric detector.2) Use the structural parameters of SAGCM-APD to make calculation, mainly including the simulating the electric field distribution of the structure, the influence of the multiplication factor, frequency response analysis.3) Optimize the epitaxial parameters of InP based P type InP, and optimize the growth of InGaAs to obtain the lattice matched epitaxial layer.4) The InP based SAGCM-APD device was prepared, and the obvious photocurrent was measured, and the avalanche breakdown state was determined.