The Research Of 3mm-wave MMIC Power Amplifier

3mm wave is belong to W-Band(75GHz-110GHz) which is a very important frequency band for many modern military satellites, radars and so on.Power amplifier(PA) is the one of important component of W-band microwave system, comparing with hybrid microwave integrated circuit(HMIC) PA, monolithic microwave integrated circuit(MMIC) PA has the advantages of small size, high reliability, easy mass production and so on.However, due to the limiting of active device’s current cut off frequency(Tf), the gain and output power of W-Band PA are general low and the design of W-Band PA is also difficult compare with low RF frequency PA. In addition, it is difficult to buy W-Band PA because of the technical blockade.To solve this problem, it has great significance in researching and designing W-Band PA independently. 2 types of W-Band PA which fulfills the requirement has been designed in this thesis, in the meantime, the MMIC taped layout which based on WIN Semiconductor’s PP10-10 0.1 um GaAs pHEMT technology has also been generated, the specific works include this research as follows:First, this thesis analyze the difficulty of W-Band PA design briefly, then we demonstrate and overseas research status and development of W-Band PA which is based on different kinds of MMIC technology, such as CMOS, GaAs, InP, GaN.After summarizing and comparing the characteristic of different MMIC technology, this paper point out the significance of this research.Second, this thesis analyze the choice of MMIC technology, the basic characteristic of PP10-10 MMIC technology and the element which is used in this work.Next this thesis introduce the basic theory of MMIC PA design such as momentum,load-pull and so on. What’s more, this paper research the pivotal technology of W-Band PA design,such as the design method, the choice of active device, ground, power combining and so on, it establish the foundation for the specific design of W-band MMIC PA.Third, this thesis present two achievable circuit structures according to the design requirements which is based on ADS2013 software and the design kit of WIN PP10-10,then this paper research and introduce the design method and process of the 2 types of W-Band PA and take the first circuit structures as example, it is also the important and difficult points of this research.Finally, this thesis analyze the thermal of the W-Band PA based on the result of large signal simulation and the cooke thermal model of GaAstransistor channel.Layout momentum simulation result shows:The working center frequency of the 2type W-Band MMIC PA is 94 GHz, the linear gain of the first PA is above 16.5dB, the input and output return loss is below-15.3dB, the bandwidth of 3dB is 4.5GHz, the sat output power and power gain is above 22.5dBm and 10.5dB, power added efficiency(PAE) is above 8.4%, chip size is 2.1mmx1.1mm, the linear gain of the second PA is above 20.8dB, input and output return loss is below-21.8dB, the bandwidth of 3dB is 3.5GHz, the sat output power and power gain is above 25.2dBm and 12.2dB, PAE is above 9.7%, chip size is 2.8mmx1.8mm.