Research On The Damage Mechanism Of GaAs-based PIN Diode Induced By High Power Microwave

The development of semiconductor technology makes the feature size of the device smaller and smaller,integrated circuit integration and working frequency rising,more and more sensitive to the external environment,improve the anti-interference ability of electronic systems become particularly important.Electromagnetic pulse(EMP)is a common form of interference and damage system.High power microwave(HPM)is a form of electromagnetic pulse,its frequency band is narrow,the peak power is extremely high,through the antenna,hole seam,etc.into the system to cause damage to the sensitive components,or to degrade the performance.In this paper,we mainly study the transient response characteristics and damage mechanism of PIN diodes used in the protection of front end of electronic systems,and the research methods and theoretical analysis of HPM interference or damage to the system are studied in two ways.The cost of the effect is high,the conclusion is difficult to have universal,so the use of device modeling and simulation of the theoretical analysis method is necessary.In this paper,Ga As-based p~+-n~--n~+diode simulation model is established by using the semiconductor device and the program simulation tool Sentaurus-TCAD software.Considering the avalanche ionization,mobility saturation and thermodynamics of the device,for the external step signal,the transient changes of the field strength,current density and temperature are analyzed,and the formation mechanism of current filament phenomenon and current spike phenomenon is discussed.The relationship between Si-PIN and GaAs-PIN burned process was compared to get GaAs-PIN has a longer burn time,more resistant to high pressure,with a higher damage energy threshold.Finally,the damage mechanism of the microwave pulse is simulated and analyzed,and the damage characteristics of the square wave,sine wave and triangular wave to the device are analyzed.The influence of repetitive frequency signal on device damage is analyzed.The damage power threshold and damage energy threshold of the PIN diode are calculated.The damage power and damage energy are obtained by curve fitting.And the trend of the theoretical thermal model is basically consistent,but also with the frequency changes,the damage energy and the maximum damage power have an extreme point,but when the frequency is high,both are reduced,and at this time burn time increased exponentially.In this paper,the research work of GaAs-PIN diodes provides a theoretical basis for the reinforcement protection of radar front-end system sensitive components,and also provides reference for future experimental research.