| Compared with the traditional memory, resistive random access memory(RRAM), as a new type of memory, is being concerned and researched by scholars, laboratories and major memory manufacturers, expected to become the standard next-generation storage technology, owning to its characteristics of high density, simple structure, low power consumption and fast read and write speed, etc. Although, RRAM have the advantage of high transition speed and high density, it still exit the reliability issues of failure of program/erase, endurance, etc, at the same time, RRAM need high request to the precision and speed of the test equipment.During the research and development of RRAM, the performance of it needs to be tested, in order to further optimize each parameter index and read and write operation methods. â… -â…¤ characteristic test is the primary method to obtain features of RRAM, write operation parameters, read operation parameters, the resistance ratio of high and low resistance state, device lifetime, multilevel storage capacity, retention time and other relevant parameters can be obtained. So this thesis defines seven test excitation signal, based on the analysis of relevant parameters and the basic operations of RRAM, covering almost all modes of test operation.According to RRAM, this thesis analyses characteristics of â… -â…¤ test excitation signal and synthetic method, RRAM test signal generation system is designed, using FPGA development platform, digital to analog converter. The procedures of waveform adopts improved step accumulation, avoiding complex division and saving hardware resources of FPGA, this method also reduces the period error of test signal. At the same time, this thesis designs a PC control software, which generates different test excitation signal, cooperating with the the lower computer. Through the actual measurement of the resulting seven kinds of RRAM test mode waveforms, feasibility of the RRAM excitation signal generating method is verified and the required test signals is obtained, that provides theoretical and practical support to complete test system.These results have profound significance for the test and reliability assessment of RRAM cell or array. |