Study And Analyze For Interface State Property And Reliability Of The MOS Devices

After integrated circuit technology run to the deep submicron process nodes,reliability of the device has become one of the major difficulties which hinder the IC processing level to extend along the Moore Law.Studies have found that the reliability problems are exacerbated in deep sub-micron MOS technology, size reduction resulting in an electric field enhancement factor is just one part of it,the other part is that process improvement will increase new reliability issues.Thus,This thesis research the reliability of 65 nm MOS device firstly,and then analyze the charge pumping technology in the role of 1um MOS device interface state density measurement.The main research contents of the thesis are as follows:1.the charge pumping technology in the role of 1um MOS device interface state density measurement is studied.The results of the theoretical analysis of the interface state density showed that the size of pulse frequency and amplitude,the leaking source reverse bias voltage and the breadth length ratioof of gate oxide and all will affect the measurement reliability of charge pump technology.meanwhile,the charge-pumping technology accurately measure the interface state density only if for the measuring frequency rang of 10 k Hz to 6000 k Hz,reverse bias voltage change from 0.3 V to 1.5 V,gate pulse voltage amplitude is greater than 3.0 V and gate width and length ratio W /L is large.2.the influence of hot carrier injection effect on 65 nm MOS device reliability is studied.Under the accelerated stress conditions,HCI degradation characteristic is studied for65 nm MOS device,and using the ratio of substrate/drain current model predicted the HCI life time for 65 nm MOS device.it was found that HCI can cause serious influence to three gate device of 65 nm,especially can cause maximum transconductance threshold voltage degradation and constant current threshold voltage degradation.3.the influence of time-dependent dielectric breakdown on 65 nm MOS component reliability is studied.Under the accelerated stress conditions,TDDB degradation characteristic is measured for 65 nm MOS device,and using the exponential mode predicted the TDDB life time for 65 nm MOS device.the results showed that the effect of TDDB bring less impact on the 65 nm MOS device,at the same time,voltage and temperature increasing can accelerate the device degradation.And at low temperature,the device may occur many times soft breakdown beforehard breakdown,but at high temperature,hard breakdown become mostly.To sum up,The results of experimental research,the model and data analysis can accurate analysis interface state density for 1um MOS device,and it also can provide a basis for analysis of HCI and TDDB degradation mechanisms.