Comparative Study On The Irradiation Effect Of The Laser To CMOS And CCD

In recent years, due to the raising of the level in the process, the image quality and flexibility of the system of CMOS are increasingly tend to CCD, its application in the fields of production, research, safety and so on is increasingly widespread. CMOS is very different from CCD in the structure of instrument and the principle of work, and the previous work is mainly about the irradiation effect researches of the laser to CCD and the neutron、proton to CMOS, so researches about the irradiation effect researches of the laser to CMOS camera has important theoretical and practical significance.In this paper, choosing CMOS and CCD for the study, the pulse laser of different pulses and continuous laser as the radiation source and using experimental study and theoretical analysis methods, studied the irradiation effect researches of the laser to CMOS and CCD from the structure and working principle. The major work of this paper is as follows:1、The experiments of the single pulse laser irradiating CMOS were taken. By using the ns pulse laser(1064nm,60ns) to irradiate CMOS, point damage, half black line damage and black lines cross damage were observed and the corresponding threshold values were measured. The point damage of CMOS was caused by the oxide layer breakdown and the increased leakage current. The half black line damage and black lines cross damage of CMOS are mainly due to the different damage degree of metal wires. By using the ps(1064nm,25ps)、fs(800nm,100fs) pulse laser to irradiate CMOS, studied the expansion phenomenon of the damaged area with the same extent in the vertical and horizontal directions during the point damage, and summarized the experimental phenomena and gave a theoretical explanation from the structure and working principle of CMOS.2、The experiments of the single pulse laser irradiating CCD were taken. By using the ns(1064nm,60ns)、ps(1064nm,25ps) pulse laser to irradiate CCD, point damage, white line damage and failure damage with the laser energy density increasing were observed. The point damage of CCD was caused by the oxide layer breakdown and the increased leakage current. CCD was continuous in the vertical direction, the cause of white line damage was mainly that the leakage current influx the vertical transfer channel, causing the saturation of the entire column. The damage area expanded faster in the vertical direction than the horizontal direction which was mainly due to the exist of the vertical transfer channel causing that the saturation charge expanded faster in the vertical direction than the horizontal direction. Compared with ns and ps pulse laser, fs(800nm,100fs) pulse laser was easier to produce the point damage, but for the nonlinear absorption, the threshold of failure damage was much higher than the thresholds when using ns and ps pulse laser.3、Based on the experiments of the continuous laser irradiating CMOS and CCD, different experimental phenomena were observed, the corresponding threshold values were measured and the relationship of the irradiation time and the damage threshold values were studied.