The Research On Damage Of Silicon Photoelectric Detector Irradiated By Millisecond Laser

The photoelectric detector has a wide application, for instance, in medical treatment, in industries and etc. When receiving photo signal, the photoelectric detector is easily disturbed and damaged by the high-energy laser signal. After damaging caused by laser, the noise of photoelectric detector will increase, and its performance will go bad. The damage mechanism of PIN photoelectric detector caused by millisecond laser irradiating is researched by two parts--theory and experiment. The working principle of photoelectric detector is introduced at first in this paper. Moreover, its damage mechanism, judgment method of damage threshold and the influence factors of damage threshold are researched.The damage threshold of silicon photoelectric detector irradiated by millisecond laser is measured in experiment. As a result, it is25.63J/cm2.The temperature variation on the face of circular target irradiated by millisecond laser is simulated, and the distribution of temperature is analyzed. As can be seen from the figure, the temperature in the center of beam on target is highest. As radius gets bigger, the surface temperature irradiated by millisecond laser will go down, the distribution is not equal. As irradiating time gets longer, the surface temperature will go up gradually.The work has a meaningful significance for analyzing damage mechanism of photoelectric detector caused by laser and improving of laser resistant ability of photoelectric detector.