Investigation Of Monolithically Integrated Diode Technology For Terahertz Multiplier-Link

Terahertz technology has very high application value in medical imaging, high-speed wireless communication, small target detection and military application fields, the current development of terahertz technology mainly be restricted by the development of the terahertz radiation sources and terahertz detection equipment, many scientific research institutions at home and abroad are trying to break through the technical bottleneck. At present, semiconductor technology is widely used to design solid-state frequency sources that development from microwave to THz wave-band, those solid-state frequency sources have more advantages than other terahertz radiation sources, such as compact structure, more lighter, high reliability, low cost. These advantages make solid-state frequency sources achieve widespread attention in terahertz technology fields that the working frequency and radiant power are not high.The terahertz technology starts early in abroad, where the level of semiconductor processing and circuit assembling is much higher than that in domestic. The domestic terahertz multiplier and mixer’s research mainly depends on foreign semiconductor devices. Meanwhile, due to the lack of the effective method to check and solve the error in assembling, the performance of circuits using hybrid integrated diode technology is poor, which greatly limits the development of our country’s terahertz device.In order to promote the progress of domestic terahertz technology in the fields of semiconductor device and monolithic integrated circuit, this paper developed 210 GHz doubler based on monolithic integrated diode technology, and studied 420 GHz monolithic integrated doubler, designed the Schottky diodes worked at 200 GHz and 400GHz:SCHOTTKY DIODE-200 and SCHOTTKY DIODE-400. The two diode prototypes will lay the foundation for future terahertz Schottky varactor design. The circuit was monolithic integrated on a 5um thickness GaAs substrate and the Schottky varactors, which are self-designed SCHOTTKY DIODE-200 and SCHOTTKY DIODE-400, were directly fabricated on the substrate.In the circuit simulation process, this paper find a problem solution how to connect the ADS’s circuit simulation model of a doubler with 3-D electromagnetic simulation model of the Schottky diodes in HFSS software, and expound the method of designing anode probe and wave port of planar Schottky’s 3-D electromagnetic simulation model in HFSS. The other aspects of circuit simulation use the mature simulation method of the previous technology. According to the experimental test, the 210 GHz doubler achieve signal’s output power of 0.32mW~0.53 mW at the frequency range of 211.92GHz~214.8GHz, and the highest conversion efficiency is 0.5% at 211.92 GHz. The experimental test didn’t achieve the desired results of circuit simulation design stage, it is not appropriate for terahertz frequency-link to experiment. The research of the paper will provide the valuable experience for using monolithic integrated diode technology to research multiplier and mixer in our country.