Design Of GaAs Monolithic Integration Terahertz Multiplier Based On Schottky Diodes

The terahertz wave has an important application prospect in the fields of medical detection,material analysis,aerospace,radar technology,and information communication due to its special spectral position,and it has gradually become a hot spot in scientific research in recent years.The generation and detection of terahertz waves is an urgent problem to be solved in the application of terahertz technology.The terahertz solid-state frequency multiplier based on planar Schottky diodes has become an important part of terahertz technology research due to its characteristics of integration,stability and reliability,room temperature operation and moderate price.In this dissertation,the high-efficiency wideband terahertz frequency multiplers are used as the research topic.Analyze the working model of the planar Schottky diodes in the terahertz band.Based on the premise of monolithic integration,the focus is on the circuit structure,output power and frequency doubling efficiency of220 GHz doubler and 340 GHz tripler,and carry out tolerance analysis on it.The specific work can be summarized as follows:(1)Considering the influence of parasitic parameters of terahertz diodes,a model analysis of planar Schottky diodes is performed.A planar Schottky diode model at terahertz operating frequency is established based on the three-dimensional electromagnetic model of the physical structure of the diodes through the HFSS software,combined with a SPICE model representing the nonlinear operating characteristics of the die.(2)Based on the field-circuit design method,adopts the circuit design idea of combining parts with the whole,and uses three-dimensional electromagnetic simulation software HFSS and circuit simulation analysis software ADS,a broadband balanced monolithic integrated 220 GHz doubler with high conversion efficiency is designed.Tolerance analysis is performed on the assembly of the chip and the shield cavity,and a test plan for the doubler is given.The simulation results show that when the input fundamental wave power is 200 mW,the output power of a single integrated 220 GHz doubler at 217 GHz can reach 18.456 mW,corresponding to a doubling efficiency of 9.25%,and the typical output power is 10 mW,corresponding to 204GHz?236GHz working frequency.(3)According to the level of semiconductor processing technology and mechanical assembly accuracy,selecting the zero-bias reverse parallel structure,and design a zero-bias balanced monolithic integrated340 GHz tripler.The assembly tolerance analysis is completed and a test plan is given.Simulation results show that when the input fundamental wave power is 100 mW,the single chip integrated 340 GHz tripler has a maximum output power of 9.143 mW at 337.5GHz,and the output power in the frequency range of 316 GHz ?350GHz exceeds 4.5 mW.