The Research Of GaAs Monolithic Integrated 650 GHz Frequency Tripler

The two issues that should be solved in the application of terahertz technology in anti-terrorism detection, space mission and communication imaging area, are generation and detection of terahertz wave. Among the different methods to generate terahertz wave, the frequency multiplier based on solid-state Schottky diode, whose advantages are working at room temperature and providing continues wave, is a key branch in terahertz technology research.The DARPA project prioritizes 650 GHz band. Limited by semiconductor and cavity processing level in domestic, the multipliers work in high terahertz band depend on import. 660 GHz being absorption frequency of water and applied in detection of atmosphere moisture profile, studying 650 GHz multiplier will support meteorological detection project.Targeted as promoting the development of TMIC diode technology domestic, driven by resolving the testing source of sub-harmonic mixer in 660 GHz meteorological detection front-ends, to achieve the breakthrough of solid-state multiplier circuit in high terahertz band in domestic, this paper studies GaAs monolithic integrated 650 GHz tripler, which including research of planar Schottky diode, the simulation and experiment of monolithic integrated tripler in 5 ?m and 12 ?m thick GaAs substrate. After analyzing the relationship between each planar Schottky diode parameters by semiconductor theory, we give design guidelines and parameter extraction method of terahertz planar Schottky 3D Electromagnetic model. Combined with the semiconductor processing level in domestic, the planar Schottky diode 3D electromagnetic model worked in 650 GHz and its nonlinear parameters are built.According to the 650 GHz planar Schottky diode, GaAs monolithic integrated 650 GHz tripler circuit solution, which is suitable for domestic assembly processing level, is proposed. First we combine the diode 3D model, nonlinear model and passive circuit by field-circuit method, then optimize the circuit through harmonic balanced method, finally study the GaAs monolithic integrated 650 GHz tripler. The measurement result shows that the 12 ?m thick one achieves its peak output power 0.086 mW at 646.6GHz with 0.5% efficiency. The output power is above 0.02 mW from 633 GHz to 652 GHz. The result of this paper fills the gap of domestic room-temperature solid-state multiplier in high terahertz band. Meanwhile, it promotes the application of planar Schottky diode technology in TMIC and accumulates experiences for extension of terahertz monolithic integrated multiplier to higher working frequency.