Analysis And Design Of 6500V IGBT

IGBT (insulated gate bipolar transistor) as a new and expanding power semiconductor device are widely used in smart grids, high-speed rail, industrial inverter and other strategic industries. However, the current domestic IGBT manufacturing technology lags behind and the reliability of the production is poor, the medium and high voltage IGBT chip relies heavily on foreign imports, our national market is almost dominated by Infineon, Fairchild, IR, ABB and other companies. Therefore, the esearch and development of high voltage IGBT products is of great significance.This paper is based on the cooperation project of the PITL of UESTC and a well-known domestic semiconductor foundry, the main subject of this thesis is to design a 6500V IGBT chip, fill the gaps, and implement self-independence of IGBT. Through the design of the new cell and termination structure and continually optimizing online process conductions, the production have been taped-out once, and ultimately the static and dynamic parameters meet the requirements of the design, provide a reference for the development of subsequent 6500V IGBT products.This thesis is mainly about the following tasks:1. From the perspective of the device structure of technological innovation, the levelopment history of IGBT is introduced in detail and the IGBT independent research svery important.2. Theoretically analyzing the structural characteristics, working principles and operating parameters of the FS-IGBT, and describing the SOA of the IGBT, which provide theoretical support for IGBT design. Firstly, combined with the company’s process conduction, the basic process of IGBT is designed. Then 6500V FS-IGBT cellular structures were reasonably designed to consider the impact of the various parts of a cellular device parameters with the simulation Software. In order to reduce the chip’s gate capacitance,6500V IGBT use the new T-shaped gate structure. The principle ind function of the Ring and Field plate termination structure are introduced, and the principles of the termination design are proposed. To improve the reliability of the chip, 5500V IGBT using ring and field plate termination structures. To solve the problem of the device of the high pressure high temperature leakage currents, the end of the field plate has dual plate structure. Finally, for the layout design, this paper introduces multiple cellular layout and features,and teminal is designed with the viewpoint of device reliability.3. The 6500V FS-IGBT structure is taped test,mainly analyze and test the static parameters of the device,the folloeing parameters;the breakdown voltage of the device is greater than 6500V,the threshold voltage is 6V,and the forward voltage drop is 3-5V.Ultimately the design requirements are met and this thesis design is completed.