3300 Vplanar Igbt Simulation Analysis And Design

IGBT is power semiconductor devices which have a wide range of application and a mature market. IGBT chip manufacturing technology abroad has been changed over six generations but in China R&D of IGBT is in the initial stage. This paper designs a3300V Planar IGBT device in order to improve related device manufacturing in the technical reserves. This subject comes from the project completed by our laboratory and a well-known semiconductor company and the main work is the design and R&D of IGBT.In this paper we have designed a3300V Planar the IGBT and the main contents are: design IGBT cellular structure, analysis and determination of key parameters,3300V high voltage IGBT terminal design and simulation analysis.First main work of this paper does a design and a simulation analysis on3300V Planar IGBT device structure and process, including design the cellular structure of the gate shape, the active area shape, the vertical structure of the device; discuss and determine the crystal orientation of the device material, resistivity, thickness, carrier lifetime and other parameters; design the device fabrication main process; discuss the implementation of critical process steps, complete the process steps of the simulation; carried out the joint simulation of device processes after finishing the cellular structure settings and process settings and at last determine the key parameter values of the device structure.Second, designed the device terminals based on3300V Planar IGBT cell structure design. In this part the author analyzes factors affects device terminal pressure and introduces common terminal structures and determines the3300V Planar IGBT terminal structure after a large number of simulation, adjustment and optimization.From the simulating results of IGBT, the forward breakdown voltage is3900V, threshold voltage is5.5V, and forward voltage is2.2V, Termination breakdown voltage is3820V. All performance parameters have met the design requirements.