Research On The Vertical Structure Of New Structure Low Power Loss IGBT

The vertical structure optimization through simulation of the new structure, low loss IGBT (LPL-IGBT) has been discussed in detail in this paper. In comparison with the prevalent IGBT, LPL-IGBT has not only the merit of transparent back emitter and high lifetime of carriers owned by NPT-IGBT but also the complex n7n+ voltage sustain layer structure owned by PT-IGBT. Not only possesses LPL-IGBT lower power loss but also the other capacities are no better than NPT-IGBT such as break down voltage, current capacities, safe operation area and cost. Simulations and experiments had proved the better performance of LPL-IGBT. The new structure IGBT boosts the performance of IGBT to a new level and has a bright future. The research gets the whole optimal vertical structure and the corresponding technology based on LPL-IGBT. The IGBT made by corresponding technology has the best performance. We established the models and gave rational explanation based on the device physics and the mechanism of IGBT. This is the first time in the world to optimize the full IGBT vertical structure. The device models, establishing method of model, the selection method of best structure and technology can be used by optimization of other IGBT and relevant devices, which have important application value.