The Design Of 3300V FS IGBT Termination

IGBT has attracted engineers to explore and research with its excellent performance and broad application prospects since its inception.Up to now,the core technology of high voltage IGBT is still in the hands of a handful of foreign companies.Due to late start and weak technology ability,domestic companies have been in a state of catching up.For high voltage IGBTs,the design of the junction terminations is important for the device's breakdown voltage and reliability.In this paper,we designed a terminal structure suitable for 3300 V FS IGBT.1.Firstly,the breakdown principle of the power device and the mechanism of the junction terminal structures are analyzed.The advantages and disadvantages of various terminal structures are compared.Finally,the design of this terminal structure is carried out.2.By negotiating with the foundry,we developed a manufacturing process.According to the process,we simulated and optimized the basic parameters of the junction termination structure.Furthermore,two different surface electric field distributions are selected for the design to make a comparative analysis.On this basis,the layout was completed and handed over to the foundry for taping out.3.The breakdown voltage of the chips reached more than 4000 V,which reached the 3300 V design goals.In addition,we have selected some devices with good static test parameters for high temperature reverse bias test(HTRB).The results showed that the reliability of the terminal structure with triangle electric field distribution is superior to that of uniform electric field distribution,which proved that the new terminal structure we proposed is a better structure.