The NPN Silicon Transistor Developed Low-noise High-frequency On Silvaco TCAD

Silvaco TCAD provides different modules of CAD-driven environment, a complete set of tools to make physical semiconductor technology can provide a strong impetus to all phases of IC design: process simulation and device simulation; generate and develop SPICE models; interconnection extremely accurate description of the parasitic parameters; physics-based modeling and reliability of traditional CAD. Silvaco use different tools, in device design, process validation, simulation to optimize the design stage of the subject, establish a rapid design system.NPN silicon transistor series belong to the high-frequency low-noise microwave semiconductor devices with high frequency characteristics, low noise figure, high gain excellent power characteristics, widely used to amplify high frequency, ultra high frequency and DC signals, unsaturated switch circuit, frequency, mixers and low noise amplifier and other circuits, in recent years a large number of satellites used in the project, the product put forward higher requirements. Since the series on technology requirements, product performance parameters is not stable enough, the production yield is low and other issues, it is difficult to meet all customer support needs. Foreign manufacturers are mainly NEC and other companies, but because of this series of domestic demand narrow range of parameters, the quality level is high, making imports difficult. The construction of a high level of domestic high-frequency low-noise transistor research platform to enhance the quality of this series of products, for meeting supporting domestic project, it is very necessary and important.Based on the above issues, the establishment of an environment in Silvaco TCAD rapid design platform by means of theoretical calculations and computer simulations, in-depth study of electrical parameters, layout design and reliability of the product, on this basis, optimize the product design, form a complete product design capability and experience to build engineered NPN silicon transistor design of low-noise high-frequency technology platform is necessary.NPN silicon high-frequency low-noise transistor main parameters for high-frequency characteristics and low noise figure, frequency and noise characteristics and other aspects of this paper frequency low noise NPN silicon transistor theoretical analysis, on the basis of, according to the design specifications, the vertical structure parameters were frequency low noise NPN silicon transistor, horizontal structure parameters calculation and selection, the main parameters and characteristic frequency, noise figure, power gain, etc. have been accounted for; in structure, using the structure of a buffer base region; in the graphics, the use of a comb-like structure; NPN silicon transistor high-frequency low-noise process and draw the graphic design of microwave low noise transistors; conducted a process and device simulation simulation, and extract the relevant parameters; trial design out of NPN silicon high-frequency low-noise transistor, tested and meets the predetermined design specifications.