Research Of Monolithic Low Noise Amplifier Technology

With the rapid development of microwave technology in recent years, the need of the monolithic amplifier is growing in the military and civilian areas. The research of monolithic low noise amplifier is especially important. In this paper, the S band and Ku band monolithic low noise amplifier are widely used in satellite communication, and they have great market value.The research of this paper is based on the 0.15 μm Ga As Low Noise PHEMT process line provided by Taiwan WIN semiconductor company, and the circuit and layout of the Ku-band and S-band Low Noise amplifier are achieved by. simulation. Then, the paper introduces MMIC technology background and characteristics, relative device model analysis and process flow. Finally it deeply researches bias circuit and matching circuit of Monolithic Low Noise Amplifier. Finally it achieves low noise and high gain.Among them, the Ku-band amplifier uses two stages common source topology structure. Single-stage amplifier includes input and output matching networks, and all stages are matched to 50? in order to connect. And every stage connect the source of negative feedback in series to improve the stability. The simulation results show that the Ku-band monolithic low noise amplifier can work stably in 12.25-12.75 GHz working band, and its noise figure is less than 1.1 d B, gain is more than 20 d B, the flatness of gain is less than ±0.25 d B, the input/output return loss is better than 15 d B. It achieves the expected design goal.And the S-band amplifier works in wide band, and it uses two stages Cascode source topology structure which could reduce noise figure. At the same time, the second transistor connect the negative feedback in parallel to improve the stability. The simulation results show that the S-band monolithic low noise amplifier can work stably in 2-2.5GHz working band, and its noise figure is less than 0.8d B, gain is more than 21 d B, the flatness of gain is less than ±0.5 d B. So broadband and low noise figure amplifier are designed Successfully. The S-band amplifier are fabricated by 0.15 μm Ga As Low Noise PHEMT process successfully and tested. The measurement results show that the chip has good performance of the noise and gain.