An All-inversion-region Gm/ID Based Design Methodology For LC-CVO In CMOS Nanometer Technology

CMOS process is gradually taking the place of bipolar and GaAs technology in RF transceiver design with the advantage of low price, low power consumption, and easy to integration. The gradual development of CMOS technology, the aggressive downscaling of MOS and the improvement of CMOS devices’ characteristic frequency, will cause some parasitic effects which can effect the circuit performance and even the design of a whole wireless system, such as, CMOS substrate loss,temperature effect, leakage current, noise, mismatch, etc. So a set of tradeoffs and optimization among all parameters should be emphatically considered, to satisfy the requirement circuit module. A research on how to improve the performance system of RF circuit and analog amplifier must be done to satisfy the requirement of wireless communication devices, such as, low power consumption, miniaturization, and low cost.This article describes several common methods and design tools which are used in analog and digital circuit design. In order to design the analog circuit that is required to find, modify, or eventually invent a circuit that implements the function to be realized, and master the skills that are necessary to understand and master the right tradeoffs between all the different constraints to achieve the target specifications. Also introduces the performance of the active and passive components in the circuit and they can cause a certain impact. We can realize that it is important to learn how to choose the size of the passive and active components. The following briefly introduces MOS operation in all regions, from Weak through Strong Inversion,emphasizing decreasing transconductance efficiency at increasing inversion levels. A key aspect of this work is the detailed treatment of moderate inversion, which is increasingly important in low-voltage, low-power design. Based on the VCO and OTA principles, combined with the characteristics of the moderate inversion, this paper has designed VCO and OTA which are work in low-voltage, low-power. This thesis presents readers the following two parts:(1) A fully differential voltage-controlled oscillator which is working in 2.4GHz with excellent output voltage amplitude and phase noise performance is designed by this thesis. This work deals with the design, in CMOS nanometric technologies, of analog blocks for RF applications, based on the complete exploration ofall-inversion-regions in which the MOS transistor is biased. The fundamental tool has been the systematic use of the MOS transistors gm/ID technique and the description of the real behavior of all devices by means of semi-empirical models.(2) Describes circuits and circuit operation for the simple cascaded OTAs.MOSFET inversion coefficients, channel lengths, and drain currents are equal for all signal-path devices in a given OTA version. As described later, this does not result in optimal thermal noise, flicker noise, or local-area mismatch, but provides a simple,initial design illustration typical of general-purpose OTAs.In this thesis all circuit design is based on TSMC 90 nm CMOS technology.Cadence SpectreRF and Virtuoso Layout are respectively employed to simulate the circuit, and to draw the circuit layout. Simulation results show that the phase noise of VCO is-110.8dBc@1MHz at 2.4GHz output frequency, the bias current is 147 uA under 1.2V supply and the corresponding power consumption is 0.4mW. The gain the simulated OTAs is 31 dB, the corresponding phase margin is 70 o, the power consumption is 7uW under 1.2V supply.