The Design And Verification Of Resonanttunneling Transistor Composed Of RTD/HEMT In Parallel

As the characteristic dimension of microelectronic devices have been scaled down toward nanometer order with the development of IC technology and the increasing integration density, novel devices based on nanostructures have been being put forward little by little. The nanoelectronic devices work through quantum effects such as quantum wire devices, single-electron devices, carbon nanotubes devices, resonant tunneling devices, among which, RT devices stand out due to their unique negative differential resistance characteristics and high-speed, low voltage, low power consumption, high integration and relatively matured manufacturing processes. RT devices appear good prospects in the future and become one of the developing directions of the novel nanometer semiconductor devices and ICs.RT devices include resonant tunneling diodes(RTD) and resonant tunneling transistor(RTT). Typical RTD is made of a double barrier single potential well material structure with two electrodes, which works through quantum resonant tunneling effect and is featured of high-speed behavior. RTT is a three-terminal nanodevices with DBSW structure and is generally divided into two categories: gate controlled RTT and composite RTT. The former is constituted of integrated controlled gate on the DBSW, the latter is the composition of RTD and HEMT, HBT or some other mature three-terminal devices through monolithic integration.In the paper, based on an introducing of RT device research, the shunt RTT composed of RTD/HEMT and its integration technology were studied. After the operation principle of RTD and HEMT were analyzed in details, SILVACO TCAD tool is applied to simulate the electrical characteristics as well as the influences of material parameters on electrical characteristics. Then the operational principle of the monostable-bistable logic Element(MOBILE) unit is studied, from which the theory basis for designing the composed shunt RTT is obtained; According to matching requirements of electrical characteristics between RTD and HEMT, the specific structure of RTT is designed; Combining the preparation technology of compound semiconductor quantum devices and the design process, the device simulation test is completed, some optimization ways are also proposed.