Design Of Monolithic Integrated Photoelectric Microdisplay Chip

With the rapid development of science and technology,people urgently need to find a way to transform the mass information into visual message that people can easily receive and spread.As a carrier of image and text information,electronic displays play an important role.The LED micro-display device based on MEMS technology is a multidisciplinary crossed system integrating photoelectric devices,integrated circuits and optical systems,it has many advantages,such as light weight,small size,high resolution and so on,it is widely used in near-to-eyes displays and micro-projectors,and has a broad application prospect in aerospace,military,medical and consumer electronics fields.Based on the standard CMOS technology,by innovatively integrating MOS structure high efficiency silicon LED arrays and driving circuits on the same silicon substrate,a monolithic integrated photoelectric micro-display chip with the scale of 100×100 is designed and fabricated successfully in this thesis.The main work is as follows:(1)The development of electronic display technology,the characteristics and technical classification of micro-display devices,the structural features of LED microdisplay devices and the research status at home and abroad are introduced.Based on the principle of visible light emitted by silicon PN junction in avalanche breakdown,a MOS structure high efficiency silicon light-emitting devices which are fully compatible with CMOS technology is designed and fabricated under the 0.18μm standard CMOS process,its electrical and optical properties are tested.(2)Using the MOS-like silicon LED verified by tape-out as pixel light-emitting unit,specific circuits of the monolithic integrated photoelectric micro-display chip are designed.First,by adapting the semi-active addressing driver strategy,silicon LED arrays driver circuits including reference current generation circuits,output current source arrays and current steering switches are designed,the best transistor sizes are selected by the trade-off between performance and cost.Secondly,the SPI communication protocol is studied,and SPI interface circuit is integrated in the micro-display chip.Finally,fully considering the factors and mechanism of ESD,a dual diode ESD protection circuit and a power clamp circuit are designed between I/O pads and power/ground.(3)The chip layout design,tape-out and test.The basic steps of chip layout design are introduced,latch-up effect in CMOS circuits layout design and other key factors that may affect chip performance are studied,and improvement measures are proposed.Under0.18μm standard CMOS process,circuit modules inside the chip are carefully designed and laid out,finally the overall layout design of the all-silicon monolithic integrated optoelectronic micro-display chip is completed,and then is delivered to factory for tapeout and packaging test.The measurement results show that the monolithic integrated photoelectric micro-display chip designed in this thesis has good monochrome image display performance with frame rate up to 500 fps.