Surface Topography And Material Removal Simulation Of Ultrasonic Elliptic Vibration Polishing Silicon Wafer

IC as the main component of electronic products, it’s substrate material of the silicon wafer’s processing quality, to a certain extent determines the performance of electronic products. At present, due to the performance of electronic products is more and more high, the integration level of IC is also put forward higher requirements, which requires the wafer etching width must be smaller and smaller and the surface smoothness is higher and higher. In order to reduce the manufacturing cost and increased capacity of silicon, the wafer’s diameter is growing. On the contrary,electronic products are required chip to miniaturization,thin direction. This has brought many problems to the wafer processing, especially the polishing. Therefore, the current problem is seeking a kind of processing method to improve the machined surface quality and the material removal rate of silicon. As the advantages of low polishing force, high material removal rate and Low surface damage, the ultrasonic assisted polishing is widely used. Therefore, in this paper based on the traditional chemical mechanical polishing, ultrasonic elliptical vibration assisted technology to join. And conduct the processing experiment and simulation. The main contents are as follows:Firstly, summarizes the silicon wafer polishing technology and ultrasonic assisted machining principle. Then, the main components of the ultrasonic elliptical vibration assisted polishing device and working principle are introduced. On this basis, fixed abrasive polishing tool’s surface morphology and the surface morphology and material removal of silicon wafer were mathematical modeling. And The silicon surface morphology and material removal rate of ultrasonic vibration and traditional polishing were compared and analyzed by using MATLAB software, the surface quality and material removal rate of the ultrasonic elliptical vibration assisted polishing are better. Finally, analysis the impact of polishing pressure on the ultrasonic elliptical vibration assisted polishing of silicon wafer surface quality and material removal rate, and get some technology and theory of law. Through a series of simulation and experimental research, provides a theoretical basis for the actual processing to improve the surface quality and material removal rate.