Trajectory Simulation And Basic Research About Ultrasonic Vibration Assisted Fixed Abrasive Grinding Of Silicon Wafer

With the development of science and technology, electronic devices have becomevery popular in people’s life, and have become as necessities and consumables.monocrystalline silicon with its excellent performance, low price and easy preparation andother characteristics, has been the most widely electronic chip substrate materials. Thesurface quality of silicon directly affects the performance of chips and the subsequentproducts, with the chips are becoming more integrated, silicon line more and more detailed,so the requirements for surface quality of silicon wafers are become higher and higher.Grinding is the most commonly used method for the surface machining of silicon wafer,after years of development, a variety of silicon wafer surface processing method wereemerged, but every method more or less has some disadvantages, such as low efficiency orserious environmental pollution and so on.In these years,ultrasonic elliptical vibration assisted chemical machining method gotextensive attention, because many advantages like low cutting force, high surface qualityand processing efficiency it owned. Fixed abrasive machining, get more and more attentionfor many good characteristics in grinding process, it also eliminate the weakness oftraditional free abrasive machining about serious waste of abrasive and the environmentalpollution, so the fixed abrasive machining is consider as the development direction of thesilicon wafer planarization technology.Based on the above background, this paper do some research on the elliptic ultrasonicvibration assisted abrasive chemical mechanical polishing of silicon wafer. Firstly, theprinciples of grinding process are analyzed. Secondly, the composition and operateprocessing of the experimental device are introduced. Then, based on the mathematicalmodeling and the analysis of grinding process, the trajectory is simulated and analyzed byusing MATLAB software, some processing parameters that can affect the surfaceroughness were got through the simulation. Finally, silicon wafer grinding experiment isdone with the device introduced above, the relationship between grinding head springstiffness and material removal is analyzed，also the relationship between grinding headspring stiffness and surface roughness is studied. For the further researches provides atheoretical and experimental basis.