Optimal Design And Simulation Of The Atomizing Slurry Applied Polishing System

In recent years with the rapid development of computer technology, network andcommunication technology, more and more high to the requirement of integrated circuit (IC).At present, the technology of the chemical mechanical polishing (CMP) has become one ofthe core technology mainstream chips, widely recognised as one of the best materials globallyflat method, is widely used in hard brittle materials and the surface of the IC process smooth.But its itself there are many difficult to overcome defects hinders the further popularizationand application. In view of the problems existing in the traditional CMP, this paper proposes aspray liquefaction learn mechanical polishing method. In this paper, by improving thepolishing fog liquid for liquid system, combined with ultrasonic atomization technology forthe atomized liquid CMP experiment system is optimized, and the optimized system aresimulated and process test. Through single factor experiment to study the effect ofatomization parameters on the polishing results; Using orthogonal experiment to get theoptimal process parameters combination; And in the same conditions will atomizationpolishing comparing with traditional polishing.By using UG and3ds Max software to carry on the design and simulation, the originalfixed and compression artifacts, conveying liquid atomization polishing functions in the samedevice, improved the original experiment system due to the atomization of polishing fluidflow speed, most atomization polishing liquid has not yet contact polishing pad surface wasair compressor suction out the deficiencies of the sealing device, improve the utilization rateof the liquid atomization polish. And choose the ultrasonic medical atomizer, increase itswork external dc regulated power supply, by adjusting the parameters of the dc power supplyvoltage to control the amount of the spray atomizer. Improved ultrasonic atomizer mistquantity is far better than humidifier, and adopted the structure of the separation of liquid andtransducer, solved the caused by piezoelectric ceramic piece of direct contact with thepolishing liquid corrosion failure, by increasing the working power of the atomizer canimprove the effect of the spray atomizer.In order to verify the feasibility of the optimized polishing experiment system, on theatomization polishing process test. Through study the effect of atomization parameters on thepolishing results found: polishing liquid consumption as voltage increases with increasingatomization parameters, approximate to linear change; Silicon material removal rate increaseswith increasing voltage, but when the voltage exceeds a certain range, the removal rate ofchange is leveling off, illustrate the atomization parameters has not polishing rate increasewith the increasing of voltage. By means of atomization parameters, polishing pressure,polishing speed three factors orthogonal experimental technique, the experiment system of optimal parameters combination for atomizing voltage50V,8psi pressure polishing,polishing machine speed of70r/min, the MRR is171.853nm/min, the Ra is4.76nm.For the optimized experiment system and the original experiment system were comparedwith traditional polishing, results show that in the selection of the same process conditions,the optimized atomized liquid shi CMP system on the material removal rate and surfacemorphology were far better than the original experiment system. Analysis is due to ensure theuniformity of air flow, increases the chances of atomization polishing liquid contact polishingworkpiece surface. Compared with traditional polishing were slightly lower, but the surfaceroughness is better, and the atomization slurry CMP polishing liquid consumption (1.03g/min)is about1/10of the traditional CMP (10g/min). Analysis is due to the molecular structure ofatomizer will polishing liquid scattered form fog fluid, thus reducing the polishing liquidabrasive grain in the reunion, at the same time liquid atomization is more evenly dispersedadsorption in polishing pad, increased participation in polishing grinding grain numbereffectively, is advantageous to the surface of material removal and the formation of a highquality.