Research On Extraction Of Power Diodes Physics Model Parameters Based On QGA

Power semiconductor devices have unique advantages in the fields of energy conversion, system control and the use of new energy. It is a very important topic in the field of power electronics research that how to make better use of power electronic system composed of power semiconductor devices to improve the efficiency of energy use, reduce the cost of the unit of electricity, reduce industrial pollution. It requires further research on the theory of power semiconductor devices and its key parameters of the physical model and the dynamic characteristic, so as to realize the goal of efficient and reliable use of power electronic system.This paper takes PIN power diode as the research object, analysises the physical structure and working mechanism of PIN power diode systematically, expounds PIN power diode s static characteristic, dynamic characteristic and physical model in detail. A method is proposed which combining Saber and Matlab, compares the experimental results and the simulation waveform, extracts the parameters of power diode physic model optimizing by Quantum genetic algorithm.This method chooses the dynamic process of power diode which can reflect diode s carrier distribution and change of charge region as the object. It used the Data-Link between Saber and Matlab to data transmission. First, compared the simulation waveform obtained by the physic model simulation with the experimental results in Matlab, then optimized the parameters of power diode physic model and simulated in Saber with optimized parameters, finally, extracted the parameters of the power diode model successfully when the simulation waveform and experimental waveform were highly similar.To verify the validity of the parameters extracted by this methodjthe experiment is carried out. The results show that the parameters can describe the dynamic process of the power diode accurately, so this method is effective and reliable.