Design Of Ka-band Monolithic High Power Amplifier

This paper introduces the manufacturing process of a variety of power amplifier. The main features of Si Ge is compatible with the CMOS process, with silicon process of high integration, low cost. Pseudomorphic high electron mobility transistor speed based on Ga As material is the current mainstream Ga As technology development. Ga N material due to its wide band gap width,,make the Ga N combined with Si C HEMT at high frequency, high power, low noise performance. In P material with the electron transfer rate higher than Ga As material。Power amplifier scheme needs to consider the output power, gain, efficiency. The characteristics of binary and non binary power synthetic network analysis in detail, describes the phase and amplitude of inconsistent effects on synthetic networks, proposes how to improve the efficiency of the binary power synthetic network scheme. Finally this paper is adopted to design a Ka Band Power Amplifier MMIC in military communication system.This paper introduces the effect of low loss power synthesis technology in power amplifier, and points out the technical difficulties need to be considered in the design process: first, the loss of synthetic network; secondly, the best load impedance transistor; third, the isolation between ports; fourth, 50 ohm output impedance matching; fifth, process the difficult the degree of power amplifier needs.The paper introduces the necessity of millimeter wave power amplifier design and the important role of the electromagnetic simulation. First of all, the whole layout may be a few electrical length, in the entire layout in different position of current density, magnetic field intensity is not consistent. Secondly, because it is the design of high power amplifier, the need to understand the amplifier in the saturation region work through simulation, signal input and output energy, electromagnetic field will produce radiation and coupling occurs in some position. Finally, loss of attachment, the substrate must also be considered within the scope.The test results show that, the power amplifier can work in the 36-38 GHz frequency range, the P1 d B output power is more than 35 d Bm, the gain is higher than 18 d B, three order intermodulation in P1 d B regression 3d B is less than-21 d Bc, power added efficiency of 16%. All the indicators basically meet the needs of design requirements and application.