| With the rapid development of microwave semiconductor technology, the application of high-power microwave semiconductor devices has become increasingly widespread. In the process of devices’ development and application, the measurement of its performance and parameters has an important role. So the accurate measurement for microwave semiconductor high-power devices is particularly important, especially directly at high power. It has become a hot topic in today’s test areas.A new type of high-power automatic tuner was proposed. By it as core, highpower automatic test system based on the load-pull technique can directly measure the performance parameters of the device under test at high-power. The high-power automatic tuner is the key to the high-power automatic test system. A new structure using increased width BJ-500(40 GHz ~ 60 GHz) rectangular waveguide slotted in the center where metal probe insert waveguide cavity from is adopted as the main transmission line. The overall parameters of tuner are tuned by the horizontal position and insertion depth of the probe. The main structure of tuner is simulated on HFSS, the simulation results show that there is no leakage and resonance of electromagnetic wave in waveguide, and the structure proposed in this paper is feasible.Through the research of calibration method, a new rapid calibration method is proposed, and it is programmed on labwindows/CVI. According to the transmission theory and the rectangular waveguide theory, with the variation of probe’s horizontal position, the variation of tuner’s S-parameter is regular. Therefore, only measuring a horizontal position and a group of vertical position for the probe of tuner, tuner’s S-parameter variation with insertion depth can be obtained. Then the S-parameter of tuner at any position can be calculated. The results show by the practical measurement that this new type of calibration method proposed in this paper has small error and high precision. |
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