A Study Of Radiation Effects On SOI Devices And Circuits Reinforcement Technology

Silicon-On-Insulator technology has more superior performances than bulk technology for many applications in the harsh environment, especially in space and military domains. SOI devices usually are less vulnerable to single event effects than comparable bulk devices because the presence of buried oxide layer will reduces the collection volume. However, the total ionizing dose response of SOI devices is more complicated than that for bulk devices. Nowadays, with the development of semiconductor technology, the traditional planar devices seem to be powerless for future development of the devices. SOI FINFET technology as the mainstream direction of device development, it`s radiation studies become more and more important.In this paper, structures of 3D Multi-gate devices are firstly designed which used the ISE-TCAD software and 3D simulations of total dose radiation effects have been implemented for these devices. The simulation results show that a increment of the height of the FIN or a increment of the width of the FIN both will have a negative impact on total dose effects of the devices. This is because the two lateral gate and the front gate play a very important role for the electrostatic potential in the silicon ?n and at the FIN/BOX interface. Then, a total dose radiation simulation has been done for difference gate-structures of devices and the results show that the Ω-gate FINFET has the highest advantages in radiation-hardened of the total dose effects.Then, a inverter has been built using NMOS and PMOS transistor in the mixed model of ISE-TCAD software. And simulations are implemented to study the total dose effect of this inverter. The results show that the total dose radiation will lead to the switching threshold and output high level of this inverter degradation. Then two hardened methods have been provided to harden the inverter and simulation results show that both methods will improve the switching threshold and output high level of this inverter. At last, a three stage ring oscillator is built up with inverter and total dose effect on this oscillator is simulated to study the degradatio mechanism of circuits. And then use the methods of inverter-hardening technology to harden the oscillator. The simulation results show that both hardened methods have a good improvement for oscillator circuits, but it will reduce circuit frequency and core area instead.