Study Of Total Ionizing Dose Effects Of FinFET-based SRAM

SRAM is the key sensitive radiation chip in aerospace electronic system. At present, the CMOS integrated circuit technology has been advanced to 16 nm, and the structure of the device has been changed into the triple-gate, FinFET. The structure of the device changed dramatically, so the radiation effect is also different from the planar MOSFET. As a result, it is necessary to study the radiation effects on the FinFET-based SRAM.This thesis embarks from the radiation effect mechanism, building the model of FinFET by Sentaurus TCAD software. It has also carried on the simulated analysis of the total dose effect on FinFET device and made a comparison with that of MOSFET. The results show that the ability to tolerate the total dose of FinFET is better than that of conventional MOS device. Based on the simulation results, the simulation analysis of the sensitive circuit on SRAM storage unit and readout amplifier circuit, is carried out with Candence software. The electric performance and leakage current are obtained. Combined with simulation analysis, the worst bias of SRAM chips has been analyzed. According to the standard of 1019.2 in GJB-548 B, the total dose effect test scheme is proposed. Besides, the test process of total dose effect on FinFET SRAM and the test system have also been given in this thesis.The achievements of this thesis are as follows:?. The total dose level of FinFET device can reach a 480 krad(Si O2), which turns out to be more tolerant than that of MOS devices.?. In the total dose experiment of FinFET SRAM, great attention should be paid to the changes in electrical parameters and functional parameters of the storage array and sensitive amplifier under the condition of total dose radiation.?. The total dose effect test scheme of FinFET SRAM is creatively proposed. This paper also covers the test process of total dose effect on FinFET SRAM and the test system.