Physical Principles And Model Of Total Dose Radiation For SOI CMOS

SOI CMOS device implement single device full dielectric isolation compared to conventional bulk Si devices, making them have a better resistance to single event effect and dose rate effect capability. But its total dose radiation effects are more complex than bulk silicon devices, seriously affecting the overall radiation resistance of the device. Domestic and foreign conducted a study on the phenomenon., committing to mitigating the effects of total dose effect. On the other hand, due to the rapid development of SOI technology, current commercial TCAD device simulation software is difficult to provide good support for SOI devices total dose effects simulation needs. Thus this paper based on the lack of SOI device total dose effect used in CAD simulation process carried out improvements.In this paper based on the lack of SOI device total dose effect designed a program for total dose radiation effects, and carried out a total dose radiation effects program design and verification, The results obtained are:1. This paper propose an improved total dose radiation effects model, which subdivided the overall process to facilitate subsequent research and design, compared to the traditional model. Considering different photon energies and properties affect the results of radiation effects, as well as energy attenuation factor in the device propose photon attenuation model and dose equivalent models. Considering the effect of the charge yield and the capture cross section by the electric field in the oxide layer of the device proposed the initial farm models. Considering the electric field in the oxide layer constantly changing with time proposed the model for electric field changing. Finally, this paper use a discrete-time model to improve the computational model of the total dose radiation effects, which laid the foundation for the development of the follow-up program.2. Based on the improved total dose effect model, this paper have developed a total dose radiation effects software. The software uses a discrete-time cumulative iterative algorithm to calculate the hole surface density yield by total dose deposition to replace the existing traditional manual calculation. Meanwhile, for the other properties of light and device, this paper reservde the extensible interface that can be used to facilitate the subsequent improvement and expansion.3. This paper verified the improvement total dose radiation effects model and the corresponding software. The development of the simulation program and Sentaurus TCAD soft ware together form simulation platform, which can be quantitatively simulate the electrical characteristics of SOI CMOS device degradation. Based on the measured data of SOI MOS device before and after radiation, the simulation data of device electrical characteristics were compared. By comparing and analyzing multiple sets of data, software and simulation platform can well predict the degradation of electrical properties of SOI CMOS device. Error between simulation and measured values is small, which verify the feasibility and accuracy of the model and procedures.Results achieved by this paper shows that the improved total dose effects model can be used to simulation test and theory, and can be used in computer simulations to can improve the process of the device, which raised the speed of design and reduced costs.