Preparation Of AlGaN Film By Magnetron Sputtering And High Temperature Ammoniated Two-Step Method

The third generation of semiconductor materials represented of Ⅲnitride with a direcht band gap,high electron mobility,high thermal conductivity,chenmical and mechanical stability properties,has broad application prospects in electrical,magnetic and optical,etc.Especially AlxGa1xN semiconductor material,whose band gap can continuously adjustable from 3.4eV to 6.2eV with aluminum conmponent change and can be widely applied in the LED,HEMT and UV detector, it become a hot topic that preparing AlGaN films. by different techniques and performance analysis.In the paper prepared GaN and AlN films on Si substrates by magnetron sputtering and high ammoniated two-step method:gallium oxide used as gallium source,aluminum used as aluminum source,ammonia gas and nitrogen used as nitrogen source, researched the impact on the GaN growth with ammoniated temperature,operating pressure,sputtering time and the impact on the AlN growth withsubstrare temperature,nitrogen concentration, operating pressure.Then prepared AlGaN films material by magnetron sputtering and high ammoniated two-step method in based on GaN and AlN preparation process by adjusting process parameters.Researched the impact on the AlGaN films growth in different process parameters through XRD,SEM,EDS characterization analysis of the prepared samples.The results showed that it can grow AlGaN film on the Si sunstrate by magnetron sputtering and high ammoniated two-step method. Sunstrate temperature,sputtering power, nitrogen concentration have a great impact on the AlGaN film quality.The AlGaN films quality is good in 600 "C substrate temperature,150W sputtering power and 25% nitrogen concentration conditions.Test PL spectra of the samples and appear two light-emitting peak at 510nm and 740nm. The samples were tested Hall amd all samples are n-type. Analyzed the carrier concentration and mobility variation of the different Al components:the carrier concentration increase and mobility variation decreasewith the raise of Al components.