Reserch On The Dry Etching Of Wide Bandgap Zinx Oxide And Gallium Oxide

Wide band-gap semiconductor materials ZnO and Ga2O3have raised our concern for a long time.ZnO has a wide band-gap of3.37eV,a large exciton bonding energy of60meV,and is transparent to ultraviolet light.These advantages make it well suited for short wavelength optical-electrical devices, transparent conductive films, and low threshold laser devices. Ga2O3has a bandgap of4.2-4.9eV,large breakdown voltage, and is transparent to a lower wavelength compared to ZnO.It is suitable for short wavelength optical-electrical devices,transparent conductive films,power devices,etc.Etching processe,as a core process in device making,it is widely used in device structure making,graphic substrate making,electrodes making,etc.It is very useful to broad the application of ZnO and Ga2O3device.In industrial production,dry etching is gradually taking up wet etching as the main etching process.ICP etching,with the advantages of simplicity,good controlbility,fast etching rate,and high resolution,has been widely used.Many reports have appeared on the wet etching of ZnO,but little of the ICP etching of ZnO which mainly reported the dry etching properties of Cl based or B based gases.As for the surface morphology and optical properties of the films after etching,no reports are found.It is meaningful to try to etch ZnO using SF6/Ar gas mixture.Ga2O3’s wet etching process is little reported either.It’s dry etching process is not found.ICP etching of Ga2O3films with a gas mixture of SF6/Ar was conducted by us,and the crystallization properties, optical properties and surface morphology were studied too.lt is unprecedented. The main works we did in this article includes as follows:1. We have analyzed the infects of ICP source power, RF power,and base pressure on the etching rate of ZnO films.2. We have studied the infects of ICP source power and RF power on the surface RMS of ZnO films using AFM.We also studied the infects of ICP source power,RF power and base pressure on the optical property of ZnO films using PL spectral.3. We have analyzed the infects of ICP source power, RF power,gas ratio and base pressure on the etching rate of Ga2O3films. 4. By changing the gas ratio of SF6/Ar,we studied the infects on the the crystallization properties and grain sizes of Ga2O3using XRD,and we studied the infects on the surface morphology and RMS of Ga2O3using AFM,and we stydied the infects on the optical porperties and optical band-gap of Ga2O3using transmittance spectral.