The Research And Application Of Inductively Coupled Plasma Etching

With the development of manufacture technology, microelectronic process is going forward. As an important step of microelectronic process, etching technology has gained much attention. It will play an important role in microfabrication such as new-made microeletronics mechanism(MEMS) and photoelectrics integration system. Plasma etching has been widely used in the etching process of Si devices. Now the study is focused on the microfabrication of compound semiconductor. This paper studies the application of inductively coupled plasma(ICP) technology to the etching compound semiconductor InSb-In film.By means of single probe and double probe, the ion density and electron temperature of chamber (30mm and 50mm in height respectively) under varied process condition were diagnosed. The spatial distribution of the axial position of the two parameters and the varied curve that the two parameters varies with the power and air pressure are obtained. The results indicate that the ion density is 108~ 1010cm"3 and the electron temperature is 4~10eV. And the ion desenty on earthed upper cover is higher than that on earth-free. All these has provided us with scientific basis for designing the chamber of ICP etching system and selecting the appropriate etching samples.A set of ICP etching system has been designed and manufactured through the analysis of the probe diagnosed results. During the study of the system, the emphasis is laid on the matching problem of ICP coupled antenna via the RF matching device and RF power source. When the output power of the RF is within 500W and the reflection power is within 10W, a good matching effect can be gained.InSb-In material in the ICP etching system is etched by CHC1F2 plasma. Through the SEM analysis of the etching result, it can be observed that the sidewall is smooth, flat and anisotropic. Via the experiment, the best etching process of etching InSb-In material with CHClFi plasma is confirmed. And the mechanism is also analyzed and discussed.The application of ICP technology to the etching compound semiconductor InSb-In film discussed in this paper has made a solid foundation for the dry etching of this semiconductor and the development of the corresponding ICP etching system.