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Study On The Etching Technology Of ZnS Material

Posted on:2014-01-30Degree:MasterType:Thesis
Country:ChinaCandidate:J XingFull Text:PDF
GTID:2248330395487280Subject:Microelectronics and Solid State Electronics
Abstract/Summary:PDF Full Text Request
Zinc sulfide (ZnS) is an important wide-band gap compound semiconductor, with unique properties, which is the ideal materials for infrared window and head cover, so there are a lot of applications to use the ZnS material for the preparation of optical components. In the process of semiconductor manufacturing, the traditional lithography of ZnS have some limitations, and it can not meet the requirements of fabrication of micro/nano size devices. This project attempts to transfer the template photoresist pattern by using nanoimprint lithography. At present, ZnS mainly adopts the technique of dry etching, and inductively coupled plasma etching technique has the features of high etching rate, low damage, high precision, good in anisotropic, which has been widely used in microelectronic processing.First, the paper simulated the different heating methods in the embossing equipment on the heating platform surface temperature uniformity according to the need of the hot embossing equipment. and developed a heating mode with heating speed, temperature distribution uniform; The paper mainly study the influence of ZnS etching rate and surface roughness of different process parameters, such as the gas total flow, Ar content, bias power and RF power by using inductively coupled plasma equipment, and a group of optimal process parameters was concluded for the production of fine structure of ZnS materials; We researched the preparation and etching process of hot embossing PMMA resist coating, and gained the relationship between the thickness of PMMA resist and the spin speed, the etching selection ratio of PMMA resist and ZnS material.The experimental results show that:(1) In the process of hot embossing, the temperature distribution of platform surface is uniform when using structure of the cylinder with spiral heating wire to heat the Heating platform.(2) In the process of inductively coupled plasma etching of ZnS, when CH4:H2:Ar=1:7:5, the total gas flow of52sccm,80W bias power, RF power of300W, the ZnS etch rate is18.5nm/min, the minimum surface roughness is6.3nm, and the etched surface sediments is relatively less.(3) It can meet the requirement of PMMA film thickness of0.7μm when the spin speed is2500r/min and it repeated spin coating three times, and obtain the PMMA film with smooth surface and small roughness.(4)In the etching optimum parameters of the ZnS, the selection ratio of PMMA resist to ZnS etching is40:1.
Keywords/Search Tags:zinc sulfide, inductively coupled plasma etching, process parameters, etchingcharacteristics
PDF Full Text Request
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